2.0-18.0 ghz gaas mmic low noise amplifier page 1 of 7 features self bias architecture 16.0 db small signal gain 2.5 db noise figure +13.0 dbm p1db compression point 100% visual inspection to mil-std-883 method 2010 general description parameter units ghz db db db db db db dbm dbm dbm vdc ma min. 2.0 - - - - - - - - - - - typ. - 9.0 10.0 16.0 +/-1.0 30.0 2.5 +13.0 +31.0 +22.0 +8.0 70 max. 18.0 - - - - - - - - - +8.5 90 supply voltage (vd) supply current (id) input power (pin) storage temperature (tstg) operating temperature (ta) channel temperature (tch) +9.0 vdc 110 ma +20 dbm -65 to +165 o c -55 to mttf table mttf table chip device layout (1) channel temperature affects a device's mttf. it is recommended to keep channel temperature as low as possible for maximum life. 1 1 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2007 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. mimix broadband?s two stage 2.0-18.0 ghz gaas mmic low noise amplifier has a small signal gain of 16.0 db with a noise figure of 2.5 db across the band. this mmic uses mimix broadband?s 0.3 m gaas phemt device model technology, and is based upon optical beam lithography to ensure high repeatability and uniformity. the chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. this device is well suited for fiber optic, microwave radio, military, space, telecom infrastructure, test instrumentation and vsat applications. electrical characteristics (ambient temperature t = 25 o c) absolute maximum ratings frequency range (f ) input return loss (s11) output return loss (s22) small signal gain (s21) gain flatness ( s21) reverse isolation (s12) noise figure (nf) output power for 1 db compression (p1db) output second order intercept point (oip2) output third order intercept point (oip3) drain bias voltage (vd1,2) supply current (id) (vd1,2=8.0v) cmm1110-bd january 2007 - rev 29-jan-07 100% on-wafer dc testing and 100% rf wafer qualification. wafer qualification includes sample testing from each quadrant with an 80% pass rate required.
page 2 of 7 low noise amplifier measurements 2.0-18.0 ghz gaas mmic low noise amplifier cmm1110-bd mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2007 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. january 2007 - rev 29-jan-07 cmm1110 vd=8.0 v id=70 ma 8 9 10 11 12 13 14 15 16 17 18 0246810121416182022 frequency (ghz) gain (db) -25 -20 -15 -10 -5 0 5 10 15 20 25 input/output return loss (db) s21 s11 s22 cmm1110 vd=8.0 v id=70 ma 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 frequency (ghz) noise figure (db) cmm1110 vd=8.0 v id=70 ma 8 9 10 11 12 13 14 15 16 17 18 1 2 3 4 5 6 7 8 9 1011121314151617181920 frequency (ghz) output power p1db (dbm) cmm1110 vd=8.0v id=70 ma 10 11 12 13 14 15 16 17 18 19 20 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 frequency (ghz) output power psat (dbm)
page 3 of 7 low noise amplifier measurements (cont.) 2.0-18.0 ghz gaas mmic low noise amplifier cmm1110-bd mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2007 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. january 2007 - rev 29-jan-07 cmm1110 vd=8.0 v id=70 ma 10 11 12 13 14 15 16 17 18 19 20 0246810121416182022 frequency (ghz) gain (db) 88degc -45degc 25degc cmm1110 vd=8.0 v id=70 ma 9 10 11 12 13 14 15 16 17 18 19 1 2 3 4 5 6 7 8 9 1011121314151617181920 frequency (ghz) output power p1db (dbm) +85c -40c +25c cmm1110 vd=8.0 v id=70 ma -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 0 2 4 6 8 10 12 14 16 18 20 22 frequency (ghz) input return loss (db) 88degc -45degc 25degc cmm1110 vd=8.0 v id=70 ma -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 0 2 4 6 8 10121416182022 frequency (ghz) output return loss (db) 88degc -45degc 25degc
page 4 of 7 s-parameters 2.0-18.0 ghz gaas mmic low noise amplifier typical s-parameter data for cmm1110 v d=8.0 v id=70 m a frequency s11 s11 s21 s21 s12 s12 s22 s22 (ghz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 0.1 0.997 -17.15 0.001 -114.78 0.000 -2.60 0.901 -25.83 0.5 0.906 -90.42 0.103 36.33 0.003 -145.29 0.569 -66.48 1.0 0.492 102.37 6.952 -179.41 0.005 113.10 0.325 -145.18 2.0 0.145 -47.14 6.861 28.61 0.016 49.95 0.260 -167.45 3.0 0.199 -63.22 6.453 -32.19 0.018 17.23 0.268 168.55 4.0 0.270 -85.42 6.167 -76.77 0.018 -3.67 0.298 147.47 5.0 0.317 -105.34 5.928 -114.26 0.019 -19.66 0.331 127.77 6.0 0.342 -122.00 5.771 -147.92 0.019 -33.14 0.364 109.00 7.0 0.349 -135.78 5.690 -179.65 0.020 -45.25 0.391 90.67 8.0 0.345 -147.36 5.703 149.56 0.020 -56.83 0.405 73.00 9.0 0.332 -156.91 5.739 118.77 0.021 -67.52 0.404 55.71 10.0 0.319 -164.69 5.788 87.98 0.023 -80.40 0.381 39.29 11.0 0.304 -172.07 5.798 56.72 0.024 -92.40 0.338 25.05 12.0 0.289 -179.76 5.777 25.61 0.025 -105.35 0.282 14.08 13.0 0.273 170.53 5.757 -4.90 0.027 -118.26 0.223 8.05 14.0 0.258 157.12 5.820 -36.22 0.027 -131.84 0.170 14.22 15.0 0.225 134.24 5.923 -68.90 0.030 -144.59 0.170 28.25 16.0 0.181 94.45 6.006 -103.58 0.033 -158.59 0.213 33.40 17.0 0.162 40.64 6.097 -141.30 0.038 -176.87 0.246 29.74 18.0 0.217 -2.51 5.883 176.61 0.041 160.70 0.275 25.57 19.0 0.321 -25.79 5.293 132.20 0.043 136.30 0.313 23.02 20.0 0.510 -41.55 4.307 83.26 0.043 106.92 0.405 14.73 21.0 0.746 -66.30 2.832 33.61 0.034 72.39 0.478 -6.57 22.0 0.873 -90.28 1.562 -6.84 0.022 47.32 0.461 -29.63 23.0 0.905 -108.19 0.827 -37.04 0.014 27.92 0.405 -46.68 24.0 0.911 -121.78 0.450 -60.61 0.008 24.21 0.332 -62.86 25.0 0.898 -132.62 0.250 -78.36 0.004 39.39 0.277 -77.72 26.0 0.860 -138.73 0.149 -90.32 0.006 81.72 0.215 -91.15 27.0 0.896 -144.55 0.097 -103.13 0.007 51.61 0.174 -108.96 28.0 0.910 -151.12 0.066 -123.11 0.005 69.19 0.130 -139.57 29.0 0.912 -156.95 0.040 -138.03 0.004 59.81 0.102 171.38 30.0 0.921 -162.26 0.022 -155.11 0.005 72.46 0.098 104.62 cmm1110-bd mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2007 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. january 2007 - rev 29-jan-07
page 5 of 7 mechanical drawing bias arrangement bypass capacitors - see app note [2] (note: engineering designator is m420) units: millimeters (inches) bond pad dimensions are shown to center of bond pad. thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), backside is ground, bond pad/backside metallization: gold all dc bond pads are 0.080 x 0.080 (0.003 x 0.003). all rf bond pads are 0.180 x 0.080 (0.007 x 0.003). bond pad centers are approximately 0.109 (0.004) from the edge of the chip. dicing tolerance: +/- 0.005 (+/- 0.0002). approximate weight: 1.364 mg bond pad #1 (rf in) bond pad #2 (vg1) bond pad #3 (vd1) bond pad #4 (vd2) bond pad #5 (rf out) bond pad #6 (rs2-32 ) 2.0-18.0 ghz gaas mmic low noise amplifier bond pad #7 (rs2-20.0 ) bond pad #8 (rs2-15 ) bond pad #9 (rs2 - off chip) bond pad #10 (vg2) bond pad #11 (rs1-32 ) bond pad #12 (rs1-20 ) bond pad #13 (rs1-15 ) bond pad #14 (rs1 - off chip) cmm1110-bd mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2007 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. january 2007 - rev 29-jan-07 5 1 6 1.100 (0.043) 0.520 (0.021) 2 1.009 (0.040) 0.0 0.0 2.000 (0.079) 1.908 (0.075) 7 1.798 (0.071) 9 1.600 (0.063) 1.383 (0.054) 8 1.688 (0.067) 11 10 0.979 (0.039) 12 0.869 (0.034) 14 0.660 (0.026) 13 0.759 (0.030) 3 0.949 (0.037) 0.091 (0.036) 4 1.908 (0.075) 0.520 (0.021) 5 1 6 2 7 9 8 11 10 12 14 13 3 4 vd1,2 rf in rf out
page 6 of 7 app note [1] biasing - as shown in the bonding diagram, this device operates using a self-biased architecture and only requires one drain bias. bias is nominally vd1,2=8v, i total =70ma. additionally there are six total source resistors on chip. the three resistors on the input stage are 15, 20 and 32 ohms. the three resistors on the output stage are 15, 20 and 32 ohms. one of these must be bonded to ground f or each amplifier stage to achieve performance as shown. bonding to one of the other resistors or any or all in parallel may allow addi tional performance adjustment. app note [2] bias arrangement - each dc pad (vd) needs to have dc bypass capacitance (~100-200 pf) as close to the device as possible. additional dc bypass capacitance (~0.01 uf) is also recommended. device schematic 2.0-18.0 ghz gaas mmic low noise amplifier mttf table (tbd) (thermal resistance (rth) is 60.0oc/w) backplate temperature 55 deg celsius 75 deg celsius 95 deg celsius channel temperature deg celsius deg celsius deg celsius fits e+ e+ e+ mttf hours e+ e+ e+ rth c/w c/w c/w bias conditions: vd1,2=8.0v, i total =70 ma these numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricati ng foundry. cmm1110-bd mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2007 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. january 2007 - rev 29-jan-07
page 7 of 7 2.0-18.0 ghz gaas mmic low noise amplifier handling and assembly information caution! - mimix broadband mmic products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: do not ingest. do not alter the form of this product into a gas , powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. life support policy - mimix broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the president and general counsel of mimix broadband. as used herein: (1) life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. esd - gallium arsenide (gaas) devices are susceptible to electrostatic and mechanical damage. die are supplied in antistatic containers, which should be opened in cleanroom c onditions at an appropriately grounded antistatic work- station. devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. die attachment - gaas products from mimix broadband are 0.076 mm (0.003") thick and have vias through to the backside to enable grounding to the circuit. microstrip substrates should be brought as close to the die as possible. the mounting surface should be clean and flat. if using conductive epoxy, recommended epoxies are tanaka ts3332ld, die mat dm6030hk or dm6030hk-pt cured in a nitrogen atmosphere per manufacturer's cure schedule. apply epoxy sparingly to avoid getting any on to the top surface of the die. an epoxy fillet should be visible around the total die periphery. for additional information please see the mimix "epoxy specifications for bare die" application note. if eutectic mounting is preferred, then a fluxless gold-tin (ausn) preform, approximately 0.001 2 thick, placed between the die and the attachment surface should be used. a die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. the gold-tin eutectic (80% au 20% sn) has a melting point of approximately 280o c (note: gold germanium should be avoided). the work station temperature should be 310oc +/- 10oc. exposure to these extreme temperatures should be kept to minimum. the collet should be heated, and the die pre-heated to avoid excessive thermal shock. avoidance of air bridges and force impact are critical during placement. wire bonding - windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. the recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize rf port bond inductance. gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for dc bias connections. aluminum wire should be avoided. thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. bond force, time and ultrasonics are all critical parameters. bonds should be made from the bond pads on the die to the package or substrate. all bonds should be as short as possible. part number for ordering description CMM1110-BD-000X where ?x? is rohs compliant die packed in ?v? - vacuum release gel packs or ?w? - waffle trays pb-cmm1110-bd cmm1110-bd evaluation module cmm1110-bd mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2007 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. january 2007 - rev 29-jan-07
|
